cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 2.4 ghz ? 12.0 db typical gain at 1.0 ghz ? 10.0 dbm typical p 1 db at 1.0 ghz ? unconditionally stable (k>1) ? surface mount plastic package ? tape-and-reel packaging option available [1] MSA-0386 86 plastic package description the MSA-0386 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost, surface mount plastic package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 note: 1. refer to packaging section tape- and-reel packaging for surface mount semiconductors.
2 MSA-0386 absolute maximum ratings parameter absolute maximum [1] device current 70 ma power dissipation [2,3] 400 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,4] : q jc = 115 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 9.5 mw/ c for t c > 116 c. 4. see measurements section thermal resistance for more information. part number ordering information part number no. of devices container MSA-0386-tr1 1000 7" reel MSA-0386-blk 100 antistatic bag for more information, see tape and reel packaging for semiconductor devices. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 12.5 f = 1.0 ghz 10.0 12.0 d g p gain flatness f = 0.1 to 1.6 ghz db 0.7 f 3 db 3 db bandwidth ghz 2.4 input vswr f = 0.1 to 3.0 ghz 1.5:1 output vswr f = 0.1 to 3.0 ghz 1.7:1 nf 50 w noise figure f = 1.0 ghz db 6.0 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 10.0 ip 3 third order intercept point f = 1.0 ghz dbm 23.0 t d group delay f = 1.0 ghz psec 140 v d device voltage v 4.0 5.0 6.0 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 20 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 35 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0386 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 35 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .11 174 12.5 4.22 175 C18.3 .122 1 .13 C11 0.2 .11 169 12.5 4.20 170 C18.2 .124 2 .13 C20 0.4 .11 159 12.4 4.16 159 C18.1 .124 5 .14 C41 0.6 .10 149 12.2 4.09 149 C17.9 .128 8 .15 C60 0.8 .10 142 12.1 4.00 139 C17.6 .131 9 .16 C78 1.0 .09 137 11.9 3.93 129 C17.4 .136 11 .18 C93 1.5 .09 139 11.2 3.61 106 C16.6 .149 14 .20 C129 2.0 .12 149 10.3 3.28 83 C15.3 .171 13 .23 C157 2.5 .18 150 9.4 2.95 66 C14.4 .190 12 .26 C176 3.0 .25 142 8.3 2.60 48 C13.7 .207 9 .29 167 3.5 .32 133 7.2 2.29 31 C13.2 .219 3 .30 152 4.0 .40 124 6.0 2.01 15 C13.0 .224 C1 .31 142 5.0 .53 106 3.7 1.53 C13 C12.8 .228 C11 .32 128 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 g p, (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency, (ghz) figure 1. typical power gain vs. frequency, t a = 25 c. 0 2 4 6 8 10 12 14 gain flat to dc i d = 20 ma i d = 35 ma i d = 50 ma v d (v) figure 2. device current vs. voltage. 0 10 20 30 60 i d (ma) 0 2 34 56 1 40 50 t c = +85 c t c = +25 c t c = ?5 c 5 6 7 11 12 13 ?5 0 +25 +55 +85 8 9 10 11 p 1 db (dbm) nf (db) g p nf g p (db) temperature ( c) figure 3. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =35ma. p 1 db 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 4. output power at 1 db gain compression vs. frequency. 0 3 6 9 12 15 18 p 1 db (dbm) i d = 50 ma i d = 20 ma i d = 35 ma 5.5 5.0 6.0 6.5 7.0 frequency (ghz) figure 5. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 nf (db) i d = 20 ma i d = 35 ma i d = 50 ma typical performance, t a = 25 c (unless otherwise noted)
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9571e (11/99) 86 plastic package dimensions 4 0.51 0.13 (0.020 0.005) 2.34 0.38 (0.092 0.015) 2.67 0.38 (0.105 0.15) 1 3 2 2.16 0.13 (0.085 0.005) dimensions are in millimeters (inches) 1.52 0.25 (0.060 0.010) 0.66 0.013 (0.026 0.005) 0.203 0.051 (0.006 0.002) 0.30 min (0.012 min) c l 45 5 typ. 8 max 0 min ground rf input rf output and dc bias ground a03
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